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IPA80R1K4CEXKSA2

IPA80R1K4CEXKSA2

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Part No :

IPA80R1K4CEXKSA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 3.9A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10638 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 24 - Mar 28 2025
PDF
IPA80R1K4CEXKSA2 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA80R1K4CEXKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA80R1K4CEXKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA80R1K4CEXKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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