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IPA60R099P7XKSA1

IPA60R099P7XKSA1

MOSFET N-CH 600V 31A TO220

IPA60R099P7XKSA1

IPA60R099P7XKSA1

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Part No :

IPA60R099P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 31A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
461346 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 22 - Dec 26 2024
PDF
IPA60R099P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1952 pF @ 400 V
FET Feature:-
Power Dissipation (Max):29W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA60R099P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA60R099P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA60R099P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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