MOSFET N-CH 600V 31A TO220
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 99mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 530µA |
Gate Charge (Qg) (Max) @ Vgs: | 45 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1952 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 29W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMS8026SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/22A 8PQFN |
|
RJK0366DSP-00#J0Rochester Electronics |
MOSFET N-CH 30V 11A 8SOP |
|
BSZ024N04LS6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 24A/40A TSDSON |
|
IPI90R500C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 11A TO262-3 |
|
NTD4906N-1GRochester Electronics |
MOSFET N-CH 30V 10.3A/54A IPAK |
|
FQPF630Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.3A TO220F |
|
IPS65R950C6AKMA1Rochester Electronics |
POWER BIPOLAR TRANSISTOR |
|
NTB23N03RRochester Electronics |
MOSFET N-CH 25V 23A D2PAK |
|
NTMFD4952NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.8A 8DFN DL |
|
APT30M40JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 70A ISOTOP |
|
IPS60R460CEAKMA1Rochester Electronics |
IPS60R460 - 600V COOLMOS N-CHANN |
|
BFL4004Rochester Electronics |
MOSFET N-CH 800V 4.3A TO220FI |
|
APT12060LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |