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B32529D6563J

B32529D6563J

CAP FILM 0.056UF 5% 400VDC RAD

FDMS8026S

FDMS8026S

MOSFET N-CH 30V 19A/22A 8PQFN

FDMS8026S

FDMS8026S

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Part No :

FDMS8026S

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 19A/22A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12685 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FDMS8026S PDF
Type Description
Series:PowerTrench®, SyncFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2280 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
FDMS8026S is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS8026S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS8026S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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