MOSFET N-CH 800V 4.3A TO220FI
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 3.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 710 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 36W (Tc) |
Operating Temperature: | 150°C |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FI(LS) |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT12060LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |
|
PMV37EN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
STU6N60M2STMicroelectronics |
MOSFET N-CH 600V 4.5A IPAK |
|
SIHD2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A DPAK |
|
FK3503010LPanasonic |
MOSFET N-CH 30V 100MA SMINI3 |
|
STP30NF20STMicroelectronics |
MOSFET N-CH 200V 30A TO220AB |
|
IPP16CN10NGHKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 53A TO220-3 |
|
SISH101DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 16.9A/35A PPAK |
|
CSD17506Q5ATexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
RM5N60S4Rectron USA |
MOSFET N-CHANNEL 60V 5A SOT223-3 |
|
IPT60R105CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 24A 8HSOF |
|
AUIRFSL8405Rochester Electronics |
MOSFET N-CH 40V 120A TO262 |
|
2SK3707-1ERochester Electronics |
MOSFET N-CH 100V 20A TO220F-3SG |