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FQPF85N06

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FQPF85N06

FQPF85N06

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Part No :

FQPF85N06

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 53A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
FQPF85N06 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 26.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF85N06 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF85N06 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF85N06 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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