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NVGS5120PT1G

NVGS5120PT1G

MOSFET P-CH 60V 1.8A 6TSOP

2615/22-WH-1000

2615/22-WH-1000

HOOK-UP STRND 22AWG WHITE 1000'

BAT1705WE6327HTSA1

BAT1705WE6327HTSA1

DIODE SCHOTTKY 4V 150MW SOT323-3

NVGS5120PT1G

NVGS5120PT1G

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Part No :

NVGS5120PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 1.8A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
243000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
NVGS5120PT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:111mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:942 pF @ 30 V
FET Feature:-
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6
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