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IRFB4332PBF

IRFB4332PBF

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IRFB4332PBF

IRFB4332PBF

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Part No :

IRFB4332PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 250V 60A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12704 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
PDF
IRFB4332PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:33mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):390W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB4332PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB4332PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB4332PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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