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RTU002P02T106

RTU002P02T106

MOSFET P-CH 20V 250MA UMT3

RTU002P02T106

RTU002P02T106

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Part No :

RTU002P02T106

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 20V 250MA UMT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10465 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 22 - Dec 26 2024
PDF
RTU002P02T106 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 250mA, 4.5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:-
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3
Package / Case:SC-70, SOT-323
RTU002P02T106 is available at GangBo-ic.com, Please review product page below for detailed information, including RTU002P02T106 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RTU002P02T106 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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