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1812J2000153KCT

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CAP CER 0.015UF 200V C0G 1812

NVMTS0D4N04CTXG

NVMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

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CP0402P1747ENTR

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NVMTS0D4N04CTXG

NVMTS0D4N04CTXG

Image is for reference, please contact us to get the real picture

Part No :

NVMTS0D4N04CTXG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 40V 79.8A/558A 8DFNW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
051105 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:79.8A (Ta), 558A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:251 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16500 pF @ 20 V
FET Feature:-
Power Dissipation (Max):5W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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