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1.5KE16CAHR0G

1.5KE16CAHR0G

TVS DIODE 13.6V 22.5V DO201

FQD30N06TM

FQD30N06TM

MOSFET N-CH 60V 22.7A TO252

FQD30N06TM

FQD30N06TM

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Part No :

FQD30N06TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 22.7A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16276 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
FQD30N06TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:945 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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