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IPD090N03LGBTMA1

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Part No :: IPD090N03LGBTMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 30V 40A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 101110 pieces

Shipped from: HK warehouse

Expected Shipping Date: Aug 26 - Aug 30 2025

PDF: IPD090N03LGBTMA1 PDF

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1600 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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