CAP CER 0.33UF 10V U2J 1210
CAP FILM 0.068UF 10% 250VDC RAD
HEATSINK 60X60X20MM XCUT T412
MOSFET N-CH 55V 53A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16.5mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 72 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1696 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 107W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3J351R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -60V -3.5A SOT23 |
|
IRFZ14PBFVishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
2N7000-D26ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
BSD316SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 1.4A SOT363-6 |
|
DMT6009LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.3A/57A TO252 |
|
NTMFS4707NT1GRochester Electronics |
MOSFET N-CH 30V 6.9A 5DFN |
|
SI2301-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT-23 |
|
BF1005SE6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
TN5325N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
IPI60R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A TO262-3 |
|
IRF7402TRPBFRochester Electronics |
MOSFET N-CH 20V 6.8A 8SO |
|
SPD30N08S2-22Rochester Electronics |
MOSFET N-CH 75V 30A TO252-3 |
|
UJ4C075060K3SUnitedSiC |
SICFET N-CH 750V 28A TO247-3 |