MOSFET N-CH 60V 13.3A/57A TO252
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 13.3A (Ta), 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33.5 nC @ 10 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1925 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS4707NT1GRochester Electronics |
MOSFET N-CH 30V 6.9A 5DFN |
|
SI2301-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT-23 |
|
BF1005SE6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
TN5325N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
IPI60R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A TO262-3 |
|
IRF7402TRPBFRochester Electronics |
MOSFET N-CH 20V 6.8A 8SO |
|
SPD30N08S2-22Rochester Electronics |
MOSFET N-CH 75V 30A TO252-3 |
|
UJ4C075060K3SUnitedSiC |
SICFET N-CH 750V 28A TO247-3 |
|
SIE812DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A 10POLARPAK |
|
DMN3008SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 17.6A PWRDI3333 |
|
SIHG460B-GE3Vishay / Siliconix |
MOSFET N-CH 500V 20A TO247AC |
|
IXTQ52P10PWickmann / Littelfuse |
MOSFET P-CH 100V 52A TO3P |
|
IRF540SPBFVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |