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BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

MOSFET N-CH 30V 1.4A SOT363-6

JDM3-35004500-32-10P

JDM3-35004500-32-10P

MMW LOW NOISE AMPLIFIER

BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

Image is for reference, please contact us to get the real picture

Part No :

BSD316SNH6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 1.4A SOT363-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19820 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
BSD316SNH6327XTSA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:94 pF @ 15 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-6
Package / Case:6-VSSOP, SC-88, SOT-363
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