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IPB011N04NGATMA1

IPB011N04NGATMA1

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Part No :

IPB011N04NGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
050405 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 11 - Apr 15 2025
PDF
IPB011N04NGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20000 pF @ 20 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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