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BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

MOSFET N-CH 20V 19A/80A TDSON

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BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC046N02KSGAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 19A/80A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14467 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:27.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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