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IPP12CN10LGXKSA1

IPP12CN10LGXKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPP12CN10LGXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 69A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10404 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
IPP12CN10LGXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 69A, 10V
Vgs(th) (Max) @ Id:2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP12CN10LGXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP12CN10LGXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP12CN10LGXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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