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R8010ANX

R8010ANX

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Part No :

R8010ANX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 800V 10A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
150215 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
PDF
R8010ANX PDF
Type Description
Series:-
Package:Bulk
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:560mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
R8010ANX is available at GangBo-ic.com, Please review product page below for detailed information, including R8010ANX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R8010ANX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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