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IRFHM830TRPBF

IRFHM830TRPBF

MOSFET N-CH 30V 21A/40A PQFN

IRFHM830TRPBF

IRFHM830TRPBF

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Part No :

IRFHM830TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 21A/40A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
180018 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IRFHM830TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2155 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.7W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (3x3)
Package / Case:8-VQFN Exposed Pad
IRFHM830TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFHM830TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFHM830TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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