CAP ALU 100000UF 35V PRESSFIT
FIXED IND 820NH 1.24A 180 MOHM
HEATSINK 50X50X10MM XCUT T766
MOSFET N-CH 40V 195A TO262
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 225 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7330 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRF6613TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 23A DIRECTFET |
![]() |
RS3E180ATTB1ROHM Semiconductor |
MOSFET P-CH 30V 18A 8SOP |
![]() |
RV2C014BCT2CLROHM Semiconductor |
MOSFET P-CH 20V 700MA DFN1006-3 |
![]() |
FCP099N60ERochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
![]() |
FDMC86262PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2A/8.4A 8MLP |
![]() |
IPT020N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 31A/260A 8HSOF |
![]() |
SIHJ7N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7.9A PPAK SO-8 |
![]() |
IRF830ASTRLPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
![]() |
SFR9224TMRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
FDFS2P106ASanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A 8SOIC |
![]() |
IRF740ALPBFVishay / Siliconix |
MOSFET N-CH 400V 10A I2PAK |
![]() |
STF19NF20STMicroelectronics |
MOSFET N-CH 200V 15A TO220FP |
![]() |
APT14F100SRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A D3PAK |