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FCP099N60E

FCP099N60E

POWER FIELD-EFFECT TRANSISTOR

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M3TKK-4036R

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FCP099N60E

FCP099N60E

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Part No :

FCP099N60E

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
FCP099N60E PDF
Type Description
Series:SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.465 pF @ 380 V
FET Feature:-
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FCP099N60E is available at GangBo-ic.com, Please review product page below for detailed information, including FCP099N60E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCP099N60E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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