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IPT020N10N5ATMA1

IPT020N10N5ATMA1

MOSFET N-CH 100V 31A/260A 8HSOF

IPT020N10N5ATMA1

IPT020N10N5ATMA1

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Part No :

IPT020N10N5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 31A/260A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 03 - Jul 07 2025
Type Description
Series:OptiMOS™5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 50 V
FET Feature:-
Power Dissipation (Max):273W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IPT020N10N5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPT020N10N5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPT020N10N5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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