HEX KEY L SHAPE 7/64" 4.3"
MOSFET N-CH 650V 3.2A PWRFLAT88
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 22.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 120mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 62.5 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2700 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 2.8W (Ta), 150W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT5010LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
|
FK6K02010LPanasonic |
MOSFET N-CH 20V 4.5A WSMINI6 |
|
BSO203SPNTRochester Electronics |
P-CHANNEL POWER MOSFET |
|
TK17E65W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 17.3A TO220 |
|
IPU60R2K0C6BKMA1Rochester Electronics |
MOSFET N-CH 600V 2.4A TO251-3 |
|
IPAN70R750P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO220 |
|
IRF3710STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A D2PAK |
|
PMZ370UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006-3 |
|
TK46E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 80A TO220 |
|
STB16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
PSMN027-100BS,118Nexperia |
MOSFET N-CH 100V 37A D2PAK |
|
NTMFS4H02NT1GRochester Electronics |
MOSFET N-CH 25V 37A/193A 5DFN |
|
AUIRF9540NRochester Electronics |
AUTOMOTIVE POWER MOSFET |