FIXED IND 120NH 400MA 510 MOHM
MOSFET N-CH 600V 2.4A TO251-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2Ohm @ 760mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 140 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 22.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPAN70R750P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO220 |
|
IRF3710STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A D2PAK |
|
PMZ370UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006-3 |
|
TK46E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 80A TO220 |
|
STB16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
PSMN027-100BS,118Nexperia |
MOSFET N-CH 100V 37A D2PAK |
|
NTMFS4H02NT1GRochester Electronics |
MOSFET N-CH 25V 37A/193A 5DFN |
|
AUIRF9540NRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
FDMS6673BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 15.2A/28A 8PQFN |
|
IXFK240N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 240A TO264AA |
|
RTR025N03TLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
|
AONS66966Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 31.3A/100A 8DFN |
|
IRFBC40PBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |