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NTMFS4H02NT1G

NTMFS4H02NT1G

Image is for reference, please contact us to get the real picture

Part No :

NTMFS4H02NT1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 37A/193A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
NTMFS4H02NT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.651 pF @ 12 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 83W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN
NTMFS4H02NT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFS4H02NT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFS4H02NT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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