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IRF1010NSTRRPBF

IRF1010NSTRRPBF

MOSFET N-CH 55V 85A D2PAK

IRF1010NSTRRPBF

IRF1010NSTRRPBF

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Part No :

IRF1010NSTRRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 85A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
099609 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
IRF1010NSTRRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 43A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3210 pF @ 25 V
FET Feature:-
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1010NSTRRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1010NSTRRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1010NSTRRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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