MOSFET P-CH 200V 48A TO268
Type | Description |
---|---|
Series: | PolarP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 85mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 103 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 462W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5C404NAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
STW34NM60NSTMicroelectronics |
MOSFET N-CH 600V 29A TO247-3 |
|
IPZ65R095C7XKSA1Rochester Electronics |
MOSFET N-CH 650V 24A TO247-4 |
|
NTP2955Rochester Electronics |
MOSFET P-CH 60V 2.4A TO220AB |
|
IRF5210STRRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A D2PAK |
|
SPD07N60S5Rochester Electronics |
MOSFET N-CH 600V 7.3A TO252-3 |
|
ZXMN6A08GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
ATP201-V-TL-HRochester Electronics |
N-CHANNEL MOSFET |
|
HUF76619D3STRochester Electronics |
MOSFET N-CH 100V 18A TO252AA |
|
IXFA72N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 72A TO263AA |
|
CSD16301Q2Texas Instruments |
MOSFET N-CH 25V 5A 6SON |
|
STP11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |
|
BSC0502NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 26A/100A TDSON |