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RT1C060UNTR

RT1C060UNTR

MOSFET N-CH 20V 6A 8TSST

66683-2

66683-2

CONN SOCKET 24-28AWG GOLD CRIMP

RT1C060UNTR

RT1C060UNTR

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Part No :

RT1C060UNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 20V 6A 8TSST
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12625 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
RT1C060UNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:28mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
FET Feature:-
Power Dissipation (Max):650mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSST
Package / Case:8-SMD, Flat Lead
RT1C060UNTR is available at GangBo-ic.com, Please review product page below for detailed information, including RT1C060UNTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RT1C060UNTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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