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BSC014N03MSGATMA1

BSC014N03MSGATMA1

PFET, 30A I(D), 30V, 0.00175OHM,

BSC014N03MSGATMA1

BSC014N03MSGATMA1

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Part No :

BSC014N03MSGATMA1

Manufacturer
Rochester Electronics
Description
PFET, 30A I(D), 30V, 0.00175OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19161 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
BSC014N03MSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:173 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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