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IPB108N15N3GATMA1

IPB108N15N3GATMA1

MOSFET N-CH 150V 83A D2PAK

IPB108N15N3GATMA1

IPB108N15N3GATMA1

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Part No :

IPB108N15N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 83A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14397 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
IPB108N15N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id:4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB108N15N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB108N15N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB108N15N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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