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FDFMA2P859T

FDFMA2P859T

MOSFET P-CH 20V 3A MICROFET

FDFMA2P859T

FDFMA2P859T

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Part No :

FDFMA2P859T

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 3A MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14392 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
FDFMA2P859T PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MicroFET 2x2 Thin
Package / Case:6-UDFN Exposed Pad
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