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IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

MOSFET N-CH 800V 3.9A TO251-3

IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

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Part No :

IPU80R1K4CEBKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 3.9A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
IPU80R1K4CEBKMA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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