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RT1E040RPTR

RT1E040RPTR

MOSFET P-CH 30V 4A 8TSST

RT1E040RPTR

RT1E040RPTR

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Part No :

RT1E040RPTR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 4A 8TSST
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11940 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
RT1E040RPTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:45mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):550mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSST
Package / Case:8-SMD, Flat Lead
RT1E040RPTR is available at GangBo-ic.com, Please review product page below for detailed information, including RT1E040RPTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RT1E040RPTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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