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IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

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Part No :

IPB033N10N5LFATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10268 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IPB033N10N5LFATMA1 PDF
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 50 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB033N10N5LFATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB033N10N5LFATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB033N10N5LFATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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