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IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

MOSFET N-CH 100V 120A TO263-3

IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

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Part No :

IPB033N10N5LFATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10268 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
IPB033N10N5LFATMA1 PDF
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 50 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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