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MTB6N60E1

MTB6N60E1

N-CHANNEL POWER MOSFET

MTB6N60E1

MTB6N60E1

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Part No :

MTB6N60E1

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
839183 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
MTB6N60E1 is available at GangBo-ic.com, Please review product page below for detailed information, including MTB6N60E1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MTB6N60E1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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