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IRFSL3607PBF

IRFSL3607PBF

HEXFET POWER MOSFET

IRFSL3607PBF

IRFSL3607PBF

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Part No :

IRFSL3607PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11471 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
IRFSL3607PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.07 pF @ 50 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL3607PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFSL3607PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFSL3607PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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