







MOSFET N-CH 60V 30A TO220SIS
CONN PIN RCPT
CONN PLUG FMALE 60P SILVER CRIMP
.050 X .050 C.L. FEMALE IDC ASSE
| Type | Description |
|---|---|
| Series: | U-MOSVIII-H |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 15mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050 pF @ 30 V |
| FET Feature: | - |
| Power Dissipation (Max): | 25W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220SIS |
| Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
FQA34N20LRochester Electronics |
MOSFET N-CH 200V 34A TO3P |
|
|
RM40N100LDRectron USA |
MOSFET N-CH 100V 40A TO252-2 |
|
|
SIHA21N65EF-E3Vishay / Siliconix |
MOSFET N-CH 650V 21A TO220 |
|
|
FQD4P25TFRochester Electronics |
MOSFET P-CH 250V 3.1A DPAK |
|
|
BSC042NE7NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 19A/100A TDSON |
|
|
STB9NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 7A D2PAK |
|
|
NTMFS4C025NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/69A 5DFN |
|
|
FCPF380N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.2A TO220F |
|
|
SFW9530TMRochester Electronics |
MOSFET P-CH 100V 10.5A D2PAK |
|
|
EPC2023EPC |
GANFET N-CH 30V 60A DIE |
|
|
IPB136N08N3GATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TK1K9A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 3.7A TO220SIS |
|
|
RTR020P02TLROHM Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |