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NTMS4N01R2G

NTMS4N01R2G

MOSFET N-CH 20V 3.3A 8SOIC

NTMS4N01R2G

NTMS4N01R2G

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Part No :

NTMS4N01R2G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 3.3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14168 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
NTMS4N01R2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 10 V
FET Feature:-
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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