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SIT1602BI-32-18N-65.000000X

SIT1602BI-32-18N-65.000000X

MEMS OSC XO 65.0000MHZ H/LV-CMOS

FDN028N20

FDN028N20

MOSFET N-CH 20V 6.1A SUPERSOT3

FA-238V 13.0000MB-AJ0

FA-238V 13.0000MB-AJ0

CRYSTAL 13.0000MHZ 8PF SMD

CLT-130-02-S-D-BE-K-TR

CLT-130-02-S-D-BE-K-TR

CONN RCPT 60POS 0.079 GOLD SMD

FDN028N20

FDN028N20

Image is for reference, please contact us to get the real picture

Part No :

FDN028N20

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 6.1A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
439143 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2025
PDF
FDN028N20 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
FDN028N20 is available at GangBo-ic.com, Please review product page below for detailed information, including FDN028N20 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDN028N20 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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