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RM11N800T2

RM11N800T2

MOSFET N-CH 800V 11A TO220-3

RM11N800T2

RM11N800T2

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Part No :

RM11N800T2

Manufacturer
Rectron USA
Description
MOSFET N-CH 800V 11A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
389138 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 28 - Jul 02 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
RM11N800T2 is available at GangBo-ic.com, Please review product page below for detailed information, including RM11N800T2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM11N800T2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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