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BSC014N06NSATMA1

BSC014N06NSATMA1

MOSFET N-CH 60V 30A/100A TDSON7

H3CKH-1636M

H3CKH-1636M

IDC CBL - HHKC16H/AE16M/HHPK16H

0.875-5-8815

0.875-5-8815

THERM PAD 4.57MX22.23MM W/ADH

21114.1

21114.1

PG 29 FLAT CABLE PA/TPE/BK

BSC014N06NSATMA1

BSC014N06NSATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC014N06NSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 30A/100A TDSON7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
32996 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
BSC014N06NSATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-17
Package / Case:8-PowerTDFN
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