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IRLR3636PBF

IRLR3636PBF

MOSFET N-CH 60V 50A DPAK

IRLR3636PBF

IRLR3636PBF

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Part No :

IRLR3636PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 50A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16108 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRLR3636PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3.779 pF @ 50 V
FET Feature:-
Power Dissipation (Max):143W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3636PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLR3636PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLR3636PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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