IRLS3813 - 12V-300V N-CHANNEL PO
CBL RIBN 14COND 0.100 GRAY 100'
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.95mOhm @ 148A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 83 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8.02 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD4815NHT4GRochester Electronics |
MOSFET N-CH 30V 6.9A/35A DPAK |
|
2SK4146-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM055N03EPQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 80A 8PDFN |
|
RMW280N03TBROHM Semiconductor |
MOSFET N-CH 30V 28A 8PSOP |
|
IRLR3636PBFRochester Electronics |
MOSFET N-CH 60V 50A DPAK |
|
TSM900N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 11A TO252 |
|
IXTK88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO264 |
|
AON2240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 8A 6DFN |
|
IXFK64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 64A TO264AA |
|
FDMC6296Rochester Electronics |
MOSFET N-CH 30V 11.5A 8MLP |
|
NTD25P03LGRochester Electronics |
MOSFET P-CH 30V 25A DPAK |
|
FQAF11N90Rochester Electronics |
MOSFET N-CH 900V 7.2A TO3PF |
|
FDMS86101ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 13A/60A 8PQFN |