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SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8

AS22-M560-4T12

AS22-M560-4T12

ROTARY ENCODR INCREMENT 2000PPR

SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQS401ENW-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 40V 16A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12985 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SQS401ENW-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.2 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1875 pF @ 20 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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