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IRF3205STRRPBF

IRF3205STRRPBF

MOSFET N-CH 55V 110A D2PAK

SQA-0182-20-SMA-02

SQA-0182-20-SMA-02

SPACE QUALIFIED ATTENUATOR, 20 D

IRF3205STRRPBF

IRF3205STRRPBF

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Part No :

IRF3205STRRPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 110A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
718771 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IRF3205STRRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:146 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.247 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3205STRRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3205STRRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3205STRRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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