MOSFET N-CH 950V 9A TO220FP
Type | Description |
---|---|
Series: | SuperMESH5™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 950 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.25Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 450 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSP296NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.2A SOT223-4 |
|
IRF520PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
AUIRF4905STRLIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
SI7820DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 1.7A PPAK1212-8 |
|
IRF3205STRRPBFRochester Electronics |
MOSFET N-CH 55V 110A D2PAK |
|
SI7315DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |
|
SFT1443-HRochester Electronics |
SFT1443-H |
|
RM5N650LDRectron USA |
MOSFET N-CHANNEL 650V 5A TO252-2 |
|
AUIRFS3004TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK-3 |
|
AO4441Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 4A 8SOIC |
|
SI7454DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
BSZ088N03MSGRochester Electronics |
BSZ088N03 - 12V-300V N-CHANNEL P |
|
DMP3068LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.8A TSOT26 T&R |