MOSFET N-CH 800V 5A TO220
Type | Description |
---|---|
Series: | CoolMOS™ CE |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 460mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 680µA |
Gate Charge (Qg) (Max) @ Vgs: | 64 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.6 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 34W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB180N04S302ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A D2PAK |
|
CTLDM7590 TRCentral Semiconductor |
MOSFET P-CH 20V 140MA TLM3D6D8 |
|
SISS10ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 31.7A/109A PPAK |
|
SQM120N10-09_GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263 |
|
NTD4909N-1GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A IPAK |
|
IRFP260MPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 50A TO247AC |
|
2SJ661-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO263-2 |
|
PSMN2R1-40PLQNexperia |
MOSFET N-CH 40V 150A TO220AB |
|
TPH4R606NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 32A 8SOP |
|
CSD19538Q2TTexas Instruments |
MOSFET N-CH 100V 13.1A 6WSON |
|
FKI10300Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 23A TO220F |
|
BUK9Y7R6-40E,115Nexperia |
MOSFET N-CH 40V 79A LFPAK56 |
|
ZVN4210ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 450MA E-LINE |