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TWM-1L3-SC-PK

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WIRE MARKER, 0.75 IN H

SISS10ADN-T1-GE3

SISS10ADN-T1-GE3

MOSFET N-CH 40V 31.7A/109A PPAK

SISS10ADN-T1-GE3

SISS10ADN-T1-GE3

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Part No :

SISS10ADN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 31.7A/109A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10403 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31.7A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3030 pF @ 20 V
FET Feature:-
Power Dissipation (Max):4.8W (Ta), 56.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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