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CSD19538Q2T

CSD19538Q2T

Image is for reference, please contact us to get the real picture

Part No :

CSD19538Q2T

Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 13.1A 6WSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18139750 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
CSD19538Q2T is available at GangBo-ic.com, Please review product page below for detailed information, including CSD19538Q2T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CSD19538Q2T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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