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CSD19538Q2T

CSD19538Q2T

MOSFET N-CH 100V 13.1A 6WSON

CSD19538Q2T

CSD19538Q2T

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Part No :

CSD19538Q2T

Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 13.1A 6WSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18139750 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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