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FQU12N20TU

FQU12N20TU

MOSFET N-CH 200V 9A I-PAK

FQU12N20TU

FQU12N20TU

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Part No :

FQU12N20TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 9A I-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20847 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
FQU12N20TU PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
FQU12N20TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQU12N20TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQU12N20TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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